Vlasov, Yu.A.; Permogorov, S.A.; Areshkin, A.G.; Fedorov, D.L.

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

Fizika i Tekhnika Poluprovodnikov , vol.30, no.3 , Page: 433-42

Publisher: AIP , March 1996

Translated in: Semiconductors , vol.30, no.3 , Page: 241-5 , March 1996

Abstract: The structural transition occurring in polycrystals of the semiconductor solid solutions Zn/sub x/Cd/sub 1-x/Se as the composition changes was investigated on the basis of the excitonic emission spectra obtained in polarizedlight at T=2 K. For x<0.5 the crystals possess the hexagonal wurtzite structure and for x>0.7 they possess the sphalerite cubic structure. In the region 0.5<x<0.7 a continuous transition occurs between these structures because of the formation of stacking faults. The transition is accompanied by a continuous decrease of the splitting of the valence bands in the crystal field. A model is proposed for the concentration shift of the excitonic transitions of the two top valence subbands n=1A and n=1B. It was established that additional broadening of the excitonic reflection lines, which can be attributed to the structural disorder, is observed in the region of the structural transition 0.5<x<0.7. (17 References)