A.F. Ioffe Phys.-Tech. Inst., St.-Petersburg, Russia

Conference: Compound Semiconductors 1994. Proceedings of the Twenty-First International Symposium , Page: 227-32

Editor: Goronkin, H.; Mishra, U.

Publisher: IOP Publishing , Bristol, UK , 1995 , xxvii+912 Pages

Abstract: The paper is devoted to the study of interaction mechanisms between quantized states and neighbouring surfaces. The surface/well interaction was detected by photoluminescence (PL) of quantum wells (QW) located at nanometric distances from the structure surface. The redshift and the strong quenchingof QW PL line were observed with thinning of the top barrier by wet etching. The mechanism accounting for the band bending and quantum confined Stark effect is maintained. In order to study field screening processes the QW PL was investigated in a wide temperature and excitation power ranges. Under strong pumping the indication on field-induced charge build-up in near-surface QW was found due to observation of PL line broadening effect. It is shown that the latter process can lead to the transition of near-surface field screening pattern from linear to pronounced step-like shape. (13 References)